| PART |
Description |
Maker |
| 2N343B |
N-P-N GROWN-JUNCTION SILICON TRANSISTOR
|
http://
|
| 2N244 2N243 |
N-P-N GROWN SILICON TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| DDNG50P-P1 DDNG50S-P1 DAMZ15PNK87 DAMZ15SNA197 DAN |
The ITT Cannon D Subminiature Family of connectors has grown to include a wide variety of styles
The ITT Cannon D Subminiature Family of connectors has grown to include a wide variety of styles
|
ITT Industries
|
| 3SMC8.0CA 3SMC8.5CA 3SMC85CA 3SMC6.0CA 3SMC6.5CA 3 |
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(??ぇ???宸ヤ??靛?.0V,????荤???????????靛??????
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电.0V,双向玻璃钝化节点瞬变电压抑制 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE
SURFACE MOUNT BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 3000 WATTS, 5.0 THRU 170 VOLTS 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电9.0V,双向玻璃钝化节点瞬变电压抑制 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电7.0V,双向玻璃钝化节点瞬变电压抑制
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电6.5V,双向玻璃钝化节点瞬变电压抑制
SURFACE MOUNT BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 3000 WATTS/ 5.0 THRU 170 VOLTS
|
http://
Vishay Intertechnology, Inc.
Central Semiconductor, Corp.
Central Semiconductor Corp.
|
| FJZ594JC FJZ594J FJZ594JB FJZ594JBTF FJZ594JTF FJZ |
Silicon N-Channel Junction FET
Si N-channel Junction FET 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| ATF523 |
N-CHANNEL SILICON JUNCTION
|
TAG
|
| 2N5432 |
N-CHANNEL SILICON JUNCTION
|
New Jersey Semi-Conductor P...
|
| 2SK3717 |
N-channel Silicon J-FET
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC
|
| AT6022B-15 |
SILICON ABRUPT JUNCTION VARACTOR VHF BAND, 56 pF, 70 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
Advanced Semiconductor, Inc.
|
| 2EZ100 2EZ91 2EZ39 2EZ30 2EZ43 2EZ20 2EZ200 2EZ130 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts)
surface mount silicon Zener diodes
|
Pan Jit International I...
http://
Pan Jit International Inc.
PanJit International Inc.
|
| 2SK3948G |
Silicon N-channel junction FET
|
Panasonic
|
